Growth of 3C-Silicon Carbide Nanowires using Chemical Vapor Deposition
نویسنده
چکیده
The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited by electron beam evaporation on silicon and silicon dioxide (SiO2) coated silicon substrates, were found to be the most effective in aiding SiC nanowires growth. Nanowires with lengths up to 50 μm and with diameters of 50-100 nm were achieved. The SiC nanowire growth parameters are compared to that of Si. The nanowires grown were further characterized using scanning electron microscope (SEM) and electron dispersion spectroscopy (EDS).
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